1/8 august 2002 MTP3055E n-channel 60v - 0.1 w -12ato-220 stripfet? power mosfet n typical r ds (on) = 0.1 w n avalanche rugged technology n 100% avalanche tested n 175c operating temperature n application oriented characterization applications n high current, high speed switching n solenoid and relay drivers n regulators n dc-dc & dc-ac converters n motor control, audio amplifiers n automotive environment (injection, abs, air-bag, lampdrivers, etc.) absolute maximum ratings ( l ) pulse width limited by safe operating area first digit of the datecode being z or k identifies silicon characterized in this datasheet type v dss r ds(on) i d MTP3055E 60 v < 0.15 w 12 a symbol parameter value unit v ds drain-source voltage (v gs =0) 60 v v dgr drain-gate voltage (r gs =20k w ) 60 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 12 a i dm drain current (pulsed) at t c = 100c 9a i dm ( ) drain current (pulsed) 48 a p tot total dissipation at t c = 25c 40 w t stg storage temperature C65 to 175 c t j max. operating junction temperature 175 c to-220 1 2 3 internal schematic diagram
MTP3055E 2/8 thermal data avalanche characteristics electrical characteristics (t case = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 3.75 c/w rthj-amb rthc-s t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 c/w c/w c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t jmax ) 12 a e as single pulse avalanche energy (starting t j = 25c, i d =i ar, v dd =25v 50 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating x 0.8, t c =125c 10 a i gss gate-body leakage current (v ds =0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 a 2 2.9 4 v r ds(on) static drain-source on resistance v gs =10v,i d =7a 0.1 0.15 w i d(on) on state drain current v ds> i d(on) x r ds(on)max v gs = 10v 12 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =i d(on) x r ds(on)max , i d =6a 4 6s c iss input capacitance v ds =25v,f=1mhz,v gs =0 760 pf c oss output capacitance 100 pf c rss reverse transfer capacitance 30 pf
3/8 MTP3055E electrical characteristics (continued) switching resistive load source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on time rise time turn-off-delay time fall time v dd =30v,i d =7a r g =50 w v gs = 10v (see test circuit) 20 65 70 35 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge i d = 12 a,v gs =10v, v dd =40v (see test circuit) 15 7 5 nc nc nc symbol parameter test conditions min. typ. max. unit i sd source-drain current 12 a i sdm (2) source-drain current (pulsed) 48 a v sd (1) forward on voltage i sd =12a,v gs =0 2v t rr q rr reverse recovery time reverse recovery charge i sd = 12 a, di/dt = 100 a/s, v dd =30v,t j = 150c 65 0.17 ns c safe operating area thermal impedance
MTP3055E 4/8 static drain-source on resistance transconductance output characteristics gate charge vs gate-source voltage capacitance variations transfer characteristics
5/8 MTP3055E source-drain diode forward characteristics normalized on resistance vs temperature normalized gate threshold voltage vs temp.
MTP3055E 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/8 MTP3055E dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
MTP3055E 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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